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| Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Transistors 2N7002 FEATURES Power dissipation PD : 0.35W (Tamb=25) MOSFET (N-Channel) SOT-23 1. GATE 2. SOURCE 3. DRAIN 1. 0 0. 95 Drain current ID: 250mA Drain-Source voltage VDS: 60V Operating and storage junction temperature range TJ, Tstg: -55 to +150 2. 4 1. 3 2. 9 1. 9 0. 95 Unit : mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Symbol V(BR)DSS Vth(GS) lGSS IDSS unless otherwise specified) Test conditions MIN 60 1 TYP 70 1.5 2.5 10 1 500 800 500 1300 700 1.5 2.0 300 0.85 0.6 1.2 1.0 nC 3 4 MAX UNIT V nA A VGS=0 V, ID=10 A VDS=VGS, ID=250 A VDS=0 V, VGS=15 V VDS=60 V, VGS=0 V VDS=60 V, VGS=0 V, Tj=125 VGS=10 V, VDS=7.5 V VGS=4.5 V, VDS=10 V VGS=10 V, ID=250 mA VGS=4.5 V, ID=200 mA VDS=15 V, ID=200 mA IS=200 mA, VGS=0 V 0. 4 On-state Drain Current ID(ON) mA Drain-Source On-Resistance Forward Tran conductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance rDS(0n) gts VSD Qg Qgs Qgd Ciss COSS CrSS ms V VDS=30 V, VGS=10 V, ID=250 mA 0.06 0.06 25 VDS=25 V, VGS=0 V, f=1 MHz 6 1.2 pF SWITCHING TIME Turn-on Time Turn-off Time td(0n) tr td(off) VDD=30 V, RL=200 ID=100 mA,VGEN=10 V RG=10 7.5 6 7.5 20 ns 20 |
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